STW48N60M2 Datasheet, PDF (5/12 Pages) STMicroelectronics – Extremely low gate charge

STW48N60M2
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off-delay time
tf
Fall time
Table 7: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 21 A,
- 18.5 -
ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Test circuit for
resistive load switching times" and
-
17
-
ns
-
13
-
ns
Figure 19: "Switching time waveform") - 119 -
ns
Symbol
Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
VSD⁽²⁾
trr
Source-drain
current (pulsed)
Forward on voltage
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Table 8: Source-drain diode
Test conditions
VGS = 0, ISD = 21 A
ISD = 42 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17:
"Unclamped inductive load test
circuit")
ISD = 42 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Unclamped inductive
load test circuit")
Min. Typ. Max. Unit
-
42 A
-
168 A
-
1.6 V
- 487
ns
- 9.1
µC
- 37.5
A
- 605
ns
- 12.5
µC
- 41.5
A
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%.}
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