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STW48N60M2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge
STW48N60M2
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STW48N60M2
VDS @ TJmax.
650 V
RDS(on) max.
0.07 Ω
ID
42 A
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(3)
Order code
STW48N60M2
AM01476v1
Table 1: Device summary
Marking
Package
48N60M2
TO-247
Packing
Tube
January 2017
DocID026473 Rev 3
This is information on a product in full production.
1/12
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