STW43NM60ND Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode

STW43NM60ND
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 17.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
30
ns
40
ns
-
-
120
ns
50
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 35 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 35 A, di/dt = 100 A/µs
V_DD = 100 V
-
(see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 35 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
-
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
35 A
140 A
1.3 V
190
ns
1.6
µC
17
A
280
ns
3.0
µC
22
A
Doc ID 14402 Rev 3
5/12