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STW43NM60ND Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode
STW43NM60ND
N-channel 600 V, 0.075 Ω, 35 A TO-247
FDmesh™ Power MOSFET (with fast diode)
Features
Type
STW43NM60ND
VDSS @
TJMAX
650 V
RDS(on)
max
< 0.088 Ω
ID
35 A
■ The worldwide best RDS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities.
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STW43NM60ND
Marking
43NM60ND
Package
TO-247
Packaging
Tube
February 2010
Doc ID 14402 Rev 3
1/12
www.st.com
12