STS3P6F6 Datasheet, PDF (5/16 Pages) STMicroelectronics – Low gate drive power losses

STS3P6F6
Electrical characteristics
Note:
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
V_GS = 0, I_SD = 3 A
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 16 V, T_j = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
3A
-
12 A
-
1.1 V
- 20
ns
- 17.8
nC
- 1.8
A
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
DocID024437 Rev 2
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