STS3P6F6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low gate drive power losses

STS3P6F6
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet - production data
Features
8 ^{76 5}
4
123
SO-8
Figure 1. Internal schematic diagram
D (5,6,7,8)
Order code V_DSS
R_DS(on)max
I_D
STN3P6F6 60 V 0.16 Ω @ 10 V
3A
• R_DS(on) * Qg industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6^th generation of STripFET™
technology, with a new gate structure. The
resulting Power MOSFET exhibits the lowest
R_DS(on) in all packages.
G (4)
S (1,2,3)
Order code
STS3P6F6
Table 1. Device summary
Marking
Package
3K60
SO-8
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
July 2014
This is information on a product in full production.
DocID024437 Rev 2
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