STS12NH3LL_07 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET™ Power MOSFET

STS12NH3LL
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=15 V, I_D= 6 A,
R_G=4.7 Ω, V_GS=4.5 V
(see Figure 14)
Min. Typ. Max. Unit
15
ns
32
ns
18
ns
8.5
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on Voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=12 A, V_GS=0
I_SD=12 A,
di/dt = 100 A/µs,
V_DD=20 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min Typ. Max Unit
12 A
48 A
1.3 V
24
ns
17.4
nC
1.45
A
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