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STS12NH3LL_07 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET™ Power MOSFET
STS12NH3LL
N-channel 30 V - 0.008 Ω - 12 A - SO-8
ultra low gate charge STripFET™ Power MOSFET
Features
Type
STS12NH3LL
VDSS
30 V
RDS(on)
<0.0105 Ω
ID
12 A
■ Optimal RDS(on) x Qg trade-off @ 4.5 V
■ Switching losses reduced
■ Low input capacitance
■ Low threshold device
Application
■ Switching applications
Description
This series is based on the latest generation of
ST’s proprietary “STripFET™” technology. An
innovative layout enables the device to also
exhibit extremely low gate charge for the most
demanding requirements as high-side switch in
high-frequency DC-DC converters. It’s therefore
ideal for high-density converters in telecom and
computer applications.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS12NH3LL
Marking
12H3LL
Packag
SO-8
Packaging
Tape & reel
November 2007
Rev 9
1/13
www.st.com
13