STP18NM60N Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 13 A, V_GS=0
13 A
-
52 A
-
1.6 V
t_rr
Reverse recovery time
I_SD =13 A, di/dt =100 A/µs,
300
ns
Q_rr Reverse recovery charge
V_DD = 60 V
- 4.0
µC
I_RRM Reverse recovery current
(see Figure 20)
25
A
t_rr
Reverse recovery time
V_DD = 60 V
360
ns
Q_rr Reverse recovery charge
di/dt =100 A/µs, I_SD = 13 A - 4.5
µC
I_RRM Reverse recovery current
Tj = 150°C (see Figure 20)
25
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15868 Rev 4
5/21