STP18NM60N Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

STB18NM60N, STF18NM60N,
STP18NM60N, STW18NM60N
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
Order codes
V_DSS
(@Tjmax)
R_DS(on)
max.
I_D P_TOT
STB18NM60N
STF18NM60N
STP18NM60N
STW18NM60N
650 V
110 W
30 W
< 0.285 Ω 13 A
110
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
TAB
3
1
D²PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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3
Table 1. Device summary
Order codes
STB18NM60N
STF18NM60N
STP18NM60N
STW18NM60N
Marking
18NM60N
18NM60N
18NM60N
18NM60N
Package
D²PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
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October 2012
This is information on a product in full production.
Doc ID 15868 Rev 4
1/21
www.st.com
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