STL6N3LLH6 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT

STL6N3LLH6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 6 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 6 A,
di/dt = 100 A/µs,
V_DD= 16 V, T_J = 150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
6
A
-
24 A
-
1.1 V
10.6
ns
- 2.8
nC
0.5
A
Doc ID 023231 Rev 2
5/14