STL6N3LLH6 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT

STL6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet — preliminary data
Features
Order code V_DSS R_DS(on) max.
I_D P_TOT
STL6N3LLH6 30 V ^{0.025 Ω (VGS=10 V)} 6A 2.4W
0.04 Ω (V_GS=4.5 V)
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Applications
■ Switching application
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Figure 1. Internal schematic diagram
1(D)
2(D)
3(G)
D
S
Table 1. Device summary
Order code
STL6N3LLH6
Marking
STG1
6(D)
5(D)
4(S)
AM11269v1
Package
PowerFLAT™ 2x2
Packaging
Tape and reel
October 2012
Doc ID 023231 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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