STL100N6LF6 Datasheet, PDF (5/15 Pages) STMicroelectronics – High avalanche ruggedness

STL100N6LF6
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
I_SD
(1)
I_SDM
(2)
V_SD
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 22 A, V_GS = 0
I_SD = 20 A,
di/dt = 100 A/μs,
V_DD= 48V, T_J = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300μs, duty cycle 1.5%
Min. Typ. Max Unit
-
22 A
-
84 A
-
1.3 V
-
34
ns
-
44
nC
- 2.6
A
DocID018491 Rev 3
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