STL100N6LF6 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STL100N6LF6
N-channel 60 V, 3.3 mΩ typ., 25 A STripFET™ VI DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet − production data
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Features
Order code
STL100N6LF6
V_DS
60 V
R_DS(on) max
4.4 mΩ
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
I_D
25 A
PowerFLAT™ 5x6
Applications
• Switching applications
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL100N6LF6
Table 1. Device summary
Marking
Package
100N6LF6
PowerFLAT™ 5x6
Packaging
Tape and reel
March 2014
This is information on a product in full production.
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