STH310N10F7-2 Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages

STH310N10F7-2, STH310N10F7-6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min.
I_SD Source-drain current
-
(1) ^{Source-drain current}
I_SDM
(pulsed)
-
(2)
V_SD
Forward on voltage
I_SD=60 A, V_GS=0
-
t_rr
Reverse recovery time I_SD=180 A,
-
di/dt = 100 A/μs,
Q_rr Reverse recovery charge
-
V_DD=80 V, Tj=150°C
I_RRM Reverse recovery current (see Figure 15)
-
1. Pulse width limited by safe operating area.
2. Pulse duration = 300μs, duty cycle 1.5%
Typ. Max. Unit
180 A
720 A
1.5 V
85
ns
200
nC
4.7
A
DocID024040 Rev 2
5/19
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