STH310N10F7-2 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages

STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
2
2
Power MOSFET in H PAK-2 and H PAK-6 packages
Datasheet - production data
Features
TAB
2
3
1
H²PAK-2
TAB
7
1
H²PAK-6
Figure 1. Internal schematic diagram
Order codes
V_DS R_DS(on) max. I_D
STH310N10F7-2
100 V
STH310N10F7-6
2.3 mΩ
180 A
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
Order codes
STH310N10F7-2
STH310N10F7-6
Table 1. Device summary
Marking
Package
310N10F7
2
H PAK-2
2
H PAK-6
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID024040 Rev 2
1/19
www.st.com