STGW60H65DRF Datasheet, PDF (5/13 Pages) STMicroelectronics – 60 A, 650 V field stop trench gate IGBT with Ultrafast diode

STGW60H65DRF
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. Output characteristics (T_J = - 40 °C)
IC (A)
220
200
180
V_GE = 15V
V_GE = 20V
AM11847v1
13V
160
11V
140
120
100
80
60
40
9V
20
0
0
1
2
3
4
VCE (V)
Figure 3. Output characteristics (T_J = 25 °C)
IC (A)
220
200
180
V_GE = 15V
V_GE = 20V
AM11848v1
13V
160
11V
140
120
100
80
60
40
9V
20
0
0
1
2
3
4
VCE (V)
Figure 4. Output characteristics (T_J = 150 °C)
IC (A)
220
V_GE = 15V
AM11849v1
200
V_GE = 20V
13V
180
160
140
11V
120
100
80
60
40
9V
20
0
0
1
2
3
4
VCE (V)
Figure 5. Transfer characteristics
IC (A)
220
200
180
160
140
120
100
80
60
40
20
0
6
V_CE = 10V
T_J = 150°C
T_J = 25°C
7
8
9
AM11850v1
T_J = -40°C
10
11
12 VGE (V)
Figure 6. V_CE(SAT) vs. junction temperature
VCE (V)
AM11851v1
2.8
2.6
I_C = 120A
2.4
2.2
2.0
I_C = 60A
1.8
1.6
I_C = 30A
1.4
1.2
-50 -25
0
25
50
75 100 125 TJ (ºC)
Figure 7. V_CE(SAT) vs. collector current
VCE (V)
2.8
2.6
V_GE = 15V
T_J = 150°C
AM11852v1
2.4
T_J = 25°C
2.2
2.0
T_J = -40°C
1.8
1.6
1.4
1.2
30 40 50 60 70 80 90 100 110 IC (A)
DocID022346 Rev 6
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