STGW60H65DRF Datasheet, PDF (1/13 Pages) STMicroelectronics – 60 A, 650 V field stop trench gate IGBT with Ultrafast diode

STGW60H65DRF
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
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TO-247
Figure 1. Internal schematic diagram
Datasheet - production data
Applications
 Photovoltaic inverters
 Uninterruptible power supply
 Welding
 Power factor correction
 High switching frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
Features
 Very high speed switching
 Tight parameters distribution
 Safe paralleling
 Low thermal resistance
 6 µs short-circuit withstand time
 Ultrafast soft recovery antiparallel diode
Order code
Table 1. Device summary
Marking
Package
STGW60H65DRF
GW60H65DRF
TO-247
April 2013
This is information on a product in full production.
DocID022346 Rev 6
Packaging
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