STE53NA50 Datasheet, PDF (5/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Normalized Gate Threshold Voltage vs
Temperature
STE53NA50
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Fig. 1: Switching Times Test Circuits For
Resistive Load
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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