STE53NA50 Datasheet, PDF (2/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STE53NA50
THERMAL DATA
R_{t hj-ca se}
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink W ith Conductive
Grease Applied
Max
Max
0 .2 7
0 .0 5
o_C/W
o_C/W
AVALANCHE CHARACTERISTICS
S ymb ol
I_AR
E _AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR , VDD = 50 V)
Max Valu e
26
1014
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V_(BR)DSS
I_DSS
I_GSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
I_D = 1 mA V_GS = 0
Zero G ate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
V_GS = ± 30 V
Min.
500
Typ. Max.
100
1000
± 400
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 27 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
V_GS = 10 V
Min.
2.25
Typ .
3
Max.
3.75
Unit
V
0.075 0.085 Ω
53
A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
C_oss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS >ID(on) X RDS(on)MAX ID = 27 A
Min.
25
Typ. Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
13
16
nF
1500 2000 pF
450 650 pF
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