STD9NM50N Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=250V, I_D=3.7A,
R_G=4.7Ω, V_GS=10V
(see Figure 15)
Min Typ Max Unit
11
ns
16
ns
45
ns
19
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM(1)
Source-drain current
Source-drain current (pulsed)
7.5 A
30 A
V_SD(2) Forward on voltage
I_SD=7.5A, V_GS=0
) t_rr
t(s ^Qrr
c I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=7.5A, di/dt=100A/µs,
V_DD=100V, Tj=150°C
(see Figure 17)
du t_rr
ro Q_rr
P _IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=7.5A, di/dt=100A/µs,
V_DD=100V, Tj= 25°C
(see Figure 17)
te _{1. Pulse width limited by safe operating area}
Obsolete ^{Product(s) - Obsole 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%}
1.2 V
420
ns
3
µC
14
A
280
ns
2
µC
14
A
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