STD9NM50N Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220
DPAK/IPAK
TO-220FP
Unit
V_DS
Drain-source voltage (V_GS=0)
500
V
V_GS
Gate-source voltage
± 25
V
I_D
Drain current (continuous) at T_C = 25°C
7.5
7.5 ⁽¹⁾
A
I_D
Drain current (continuous) at T_C = 100°C
5
5 ⁽¹⁾
A
I_DM ⁽²⁾ Drain current (pulsed)
30
30 ⁽¹⁾
A
P_TOT Total dissipation at T_C = 25°C
t(s) ^{dv/dt (3) Peak diode recovery voltage slope}
duc ^VISO
Pro ^Tj
te ^Tstg
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T_C=25°C)
Operating junction temperature
Storage temperature
le ^{1. Limited only by maximum temperature allowed}
o _{2. Pulse width limited by safe operating area}
bs ^{3. I}SD ^{≤7.5A, di/dt ≤400A/µs, V}DD ^{=80% V}(BR)DSS
70
25
15
--
2500
-55 to 150
- ^O _{Table 2. Thermal data}
t(s) ^Symbol
Parameter
uc _{Rthj-case Thermal resistance junction-case max}
rod ^{Rthj-amb Thermal resistance junction-amb max}
te ^PTl
Maximum lead temperature for soldering
purpose
TO-220
DPAK/IPAK
TO-220FP
1.78
5
62.5
300
W
V/ns
V
°C
Unit
°C/W
°C/W
°C
ole_{Table 3. Avalanche characteristics}
Obs ^Symbol
Parameter
Max value
Unit
I_AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3
A
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D=I_AS, V_DD= 50V)
150
mJ
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