STD95N4F3_07 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET

STD95N4F3 - STP95N4F3 - STU95N4F3
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=20V, I_D= 40A,
R_G=4.7Ω, V_GS=10V
(see Figure 15)
V_DD=20V, I_D= 40A,
R_G=4.7Ω, V_GS=10V
(see Figure 15)
Min. Typ. Max. Unit
15
ns
50
ns
40
ns
15
ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=80A, V_GS=0
I_SD=80A,
di/dt = 100A/µs,
V_DD=30V, Tj=150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
320 A
1.5 V
45
ns
60
nC
2.8
A
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