STD95N4F3_07 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET

STD95N4F3 - STP95N4F3 - STU95N4F3
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS=0)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD < 80 A, di/dt < 400A/µs, V_DS < V_(BR)DSS, Tj < Tjmax
4. Starting Tj = 25°C, I_D = 40A, V_DD = 30V
Value
40
± 20
80
65
320
110
0.73
8
400
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 2. Thermal resistance
Symbol
Parameter
Value
TO-220 IPAK
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
62.5
Rthj-pcb ^{(1) Thermal resistance junction-ambient max}
--
T_l
Maximum lead temperature for soldering purpose 300
1. When mounted on 1inch² FR-4 2Oz Cu board
1.36
100
--
275
Unit
DPAK
°C/W
-- °C/W
50 °C/W
--
°C
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