STD95N2LH5_10 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

STD95N2LH5, STP95N2LH5, STU95N2LH5
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=12.5 V, I_D= 40 A,
R_G= 4.7 Ω, V_GS= 10 V
Figure 17
V_DD=12.5 V, I_D= 40 A,
R_G= 4.7 Ω, V_GS= 10 V
Figure 17
Min. Typ. Max. Unit
7
-
38
ns
-
ns
22
-
7
ns
-
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD= 35 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A, V_DD= 20 V
di/dt =100 A/µs,
Figure 19
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.1 V
32.4
ns
- 27.1
nC
1.7
A
Doc ID 13834 Rev 5
5/17