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STD95N2LH5_10 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
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Electrical characteristics
STD95N2LH5, STP95N2LH5, STU95N2LH5
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 25 V
VDS = 25 V,Tc = 125°C
VGS = ± 22 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 40 A
SMD version
VGS= 10 V, ID= 40 A
VGS= 5 V, ID= 40 A
SMD version
VGS= 5 V, ID= 40 A
Min. Typ. Max. Unit
25
V
1 µA
10 µA
±100 nA
1
V
0.0038 0.0045 Ω
0.0044 0.0049 Ω
0.005 0.006 Ω
0.006 0.007 Ω
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS =25 V, f=1 MHz,
VGS=0
VDD=13 V, ID = 80 A
VGS =5 V
Figure 18
VDD=13 V, ID = 80 A
Figure 21
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
Min. Typ. Max. Unit
1817
pF
-
420
- pF
67
pF
13.4
nC
-
6.7
- nC
4.1
nC
3.5
nC
-
-
3.2
nC
-
1.1
-
Ω
4/17
Doc ID 13834 Rev 5
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