STD95N2LH5 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 25 V - 0.0038 Ω - 80 A - DPAK - IPAK STripFET™ V Power MOSFET

STD95N2LH5 - STU95N2LH5
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=12.5 V, I_D= 40 A,
R_G= 4.7 Ω, V_GS= 10 V
(see Figure 15)
V_DD=12.5 V, I_D= 40 A,
R_G= 4.7 Ω, V_GS= 10 V
(see Figure 15)
Min. Typ. Max. Unit
7
ns
38
ns
22
ns
7
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM(1)
Source-drain current
Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD= 35 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A, V_DD= 20 V
di/dt =100 A/µs,
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
320 A
1.1 V
32.4
ns
27.1
nC
1.7
A
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