STD95N2LH5 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 25 V - 0.0038 Ω - 80 A - DPAK - IPAK STripFET™ V Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD95N2LH5 - STU95N2LH5
(T_CASE=25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 25 V
V_DS = 25 V,Tc = 125°C
V_GS = ± 20 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 40 A
SMD version
V_GS= 10 V, I_D= 40 A
V_GS= 5 V, I_D= 40 A
SMD version
V_GS= 5 V, I_D= 40 A
Min. Typ. Max. Unit
25
V
1 µA
10 µA
±100 nA
1
V
0.0038 0.0045 Ω
0.0044 0.0049 Ω
0.005 0.006 Ω
0.006 0.007 Ω
Table 5. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Q_gs1
Q_gs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V_th gate-to-source
charge
Post V_th gate-to-source
charge
R_G Gate input resistance
Test conditions
V_DS =25 V, f=1 MHz,
V_GS=0
V_DD=13 V, I_D = 80 A
V_GS =5 V
(see Figure 16)
V_DD=13 V, I_D = 80 A
(see Figure 19)
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
Min Typ. Max. Unit
1817
pF
420
pF
67
pF
13.4
nC
6.7
nC
4.1
nC
3.5
nC
3.2
nC
1.1
Ω
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