STD90N03L Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET

STD90N03L - STD90N03L-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD=40A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=80A, di/dt = 100A/µs,
V_DD=19 V, Tj= 150°C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
320 A
1.3 V
36
ns
32
µC
1.8
A
5/16