 English |
|
|
|
|
|
|
|
| STD90N03L Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET | |||
| |||
| ◁ |
Electrical characteristics
2
Electrical characteristics
STD90N03L - STD90N03L-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250µA, VGS= 0
VDS = 30V
VDS = 30V, Tc=125°C
VGS = ±20V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 40A
VGS= 5V, ID= 40A
Min. Typ. Max. Unit
30
V
1
µA
10 µA
±100 nA
1
V
0.005 0.0057 â¦
0.007 0.0011 â¦
Table 4. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Test conditions
VDS =25V, f=1MHz,
VGS=0
VDD=15V, ID = 80A
VGS =5V
(see Figure 13)
f=1MHz Gate Bias
Bias=0 Test Signal
Level=20mV
open drain
Min. Typ. Max. Unit
2805
pF
549
pF
76
pF
22 32 nC
10
nC
7
nC
1.2
â¦
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=15V, ID=40A,
RG=4.7â¦, VGS=5V
(see Figure 12)
VDD=15V, ID=40A,
RG=4.7â¦, VGS=5V
(see Figure 12)
Min. Typ. Max. Unit
19
ns
135
ns
24
ns
33
ns
4/16
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese