STD8N60DM2 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 600 V, 550 m(ohm) typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

STD8N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 8 A
ISD = 8 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
8
A
-
32 A
-
1.6 V
- 80
ns
- 188
nC
- 4.7
A
trr
Reverse recovery time
ISD = 8 A, di/dt = 100 A/µs,
- 160
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
- 640
nC
IRRM
Reverse recovery current ^{inductive load switching and}
diode recovery times")
-
8
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
DocID027865 Rev 2
5/15