STD7LN80K5 Datasheet, PDF (5/16 Pages) STMicroelectronics – 100% avalanche tested

STD7LN80K5
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD ⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD= 5 A, VGS = 0 V,
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "Test
circuit for inductive load
switching and diode recovery
times")
-
5
A
-
20 A
-
1.6 V
- 276
ns
- 2.13
µC
- 15.4
A
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
- 402
ns
Qrr
Reverse recovery
charge
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit for
- 2.79
µC
IRRM
Reverse recovery
current
inductive load switching and
diode recovery times")
- 13.9
A
Notes:
(1)_{Pulse width is limited by safe operating area}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A
Min. Typ. Max. Unit
30
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
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