STD7LN80K5 Datasheet, PDF (3/16 Pages) STMicroelectronics – 100% avalanche tested

STD7LN80K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID⁽¹⁾
ID⁽¹⁾
ID⁽²⁾
PTOT
dv/dt⁽³⁾
dv/dt⁽⁴⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Operating junction temperature
± 30
5
3.4
20
85
4.5
50
- 55 to 150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1)_{Limited by maximum junction temperature.}
(2)_{Pulse width limited by safe operating area.}
(3)_{ISD ≤ 5 A, di/dt ≤ 100 A/µs; VDS peak < V(BR)DSS, VDD=640 V}
(4)_{VDS ≤ 640 V}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2 oz Cu}
Value
1.47
50
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive (pulse width
limited by Tjmax)
1.5
A
EAS
(Single pulse avalanche energy (starting Tj = 25 °C,
ID = IAR; VDD = 50 V)
200
mJ
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