STD78N75F4 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATE Power MOSFET in TO-220 package

STP78N75F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 78 A, V_GS = 0
-
78 A
312 A
1.5 V
t_rr
Reverse recovery time
I_SD = 78 A, V_DD = 60 V
di/dt = 100 A/µs,
67
ns
Q_rr
I_RRM
Reverse recovery charge
Reverse recovery current
T_j = 150 °C
(see Figure 15)
- 183
nC
5.5
A
1. Pulse width limited by safe operating area.
Obsolete ^{Product(s) - Obsolete Product(s) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%}
Doc ID 15682 Rev 3
5/12