STD78N75F4 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATE Power MOSFET in TO-220 package

Electrical characteristics
2
Electrical characteristics
STP78N75F4
(T_CASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V_{(BR)DSS Breakdown voltage}
I_D = 250 µA, V_GS = 0
75
V
Zero gate voltage
V_DS = 75 V
1 µA
I_{DSS Drain current (VGS = 0)}
t(s) ^IGSS
uc V_GS(th)
rod ^RDS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on-
resistance
V_DS = 75 V,T_C=125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 39 A
100 µA
±100 nA
2
4
V
0.0092 0.011 Ω
lete ^P _{Table 5.}
so _Symbol
Dynamic
Parameter
Ob ^Ciss
- _Coss
t(s) ^Crss
uc _Qg
rod ^Qgs
P Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
lete_{Table 6. Switching times}
so _Symbol
Parameter
Ob td(on)
t_r
Turn-on delay time
Rise time
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DD = 37.5 V, I_D = 78 A,
V_GS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
5015
pF
-
382
-
pF
218
pF
76
nC
-
23
- nC
18.5
nC
Test conditions
V_DD = 37.5 V, I_D = 39 A
R_G = 4.7 Ω V_GS = 10 V
Min.
-
Typ.
25
33
Max. Unit
ns
-
ns
t_d(off) Turn-off-delay time
(see Figure 13)
61
ns
-
-
t_f
Fall time
14
ns
4/12
Doc ID 15682 Rev 3