STD70N6F3 Datasheet, PDF (5/11 Pages) STMicroelectronics – N-channel 60 V, 8.0 m, 70 A DPAK STripFET III Power MOSFET

STD70N6F3
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=30 V, I_D= 35 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 4),
(see Figure 7)
V_DD=30 V, I_D= 35 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 4),
(see Figure 7)
Min. Typ. Max. Unit
TBD
ns
-
-
TBD
ns
TBD
ns
-
-
TBD
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
Source-drain current
Source-drain current (pulsed)⁽¹⁾
V_SD Forward on voltage
I_SD=70 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=70 A,
di/dt =100 A/µs,
V_DD=30 V, Tj=150 °C
(see Figure 6)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
70 A
-
280 A
-
1.5 V
TBD
ns
- TBD
nC
TBD
A
Doc ID 16908 Rev 1
5/11