STD70N6F3 Datasheet, PDF (3/11 Pages) STMicroelectronics – N-channel 60 V, 8.0 m, 70 A DPAK STripFET III Power MOSFET

STD70N6F3
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS Gate-Source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽¹⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
E_AS ⁽³⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 70 A, di/dt ≤ 300 A/µs, V_DD ≤ V_(BR)DSS. Tj ≤ Tjmax
3. Starting Tj = 25°C, Id = 35 A, Vdd = 40 V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1inch², 2oz Cu.
Electrical ratings
Value
60
± 20
70
50
280
110
0.73
TBD
TBD
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
1.36
50
Unit
°C/W
°C/W
Doc ID 16908 Rev 1
3/11