STD70N03L Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 30V - 0.0059ohm - 70A - DPAK / IPAK STripFET TM III Power MOSFET

STD70N03L - STD70N03L-1
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test condictions
V_DD=15V, I_D=35A,
R_G=4.7Ω, V_GS=5V
(see Figure 13)
Min. Typ. Max. Unit
21
ns
95
ns
19
ns
15
ns
Table 6. Source drain diode
Symbol
Parameter
Test condictions
I_SD
I_SDM(1)
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=35A, V_GS=0
I_SD = 70A,
di/dt=100A/µs,
V_DD=20V, Tj=150°C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max Unit
70 A
280 A
1.3 V
32
ns
51
nC
3.2
A
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