STD70N03L Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 30V - 0.0059ohm - 70A - DPAK / IPAK STripFET TM III Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD70N03L - STD70N03L-1
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 250µA, V_GS= 0
30
V
I_DSS
Zero gate voltage drain ^VDS ^{= 20V,}
current (V_GS = 0)
V_DS = 20V,Tc = 125°C
1
µA
10 µA
I_GSS
Gate body leakage
current(V_DS = 0)
V_GS = ±20V
±100 nA
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
1
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 35A
V_GS= 5V, I_D= 35A
V_GS= 10V, I_D= 35A @Tj=125°C
V_GS= 5V, I_D= 35A @Tj=125°C
0.0059 0.0073 Ω
0.007 0.013 Ω
0.0091 0.0113 Ω
0.0108 0.0201 Ω
Table 4. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Q_gls ⁽²⁾
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Third-quadrant gate
charge
R_G Gate input resistance
V_DS =10V, I_D = 15A
V_DS =25V, f=1MHz, V_GS=0
V_DD=15V, I_D = 70A
V_GS =5V
(see Figure 7)
V_DS <0V, V_GS =10V
f=1MHz Gate DC Bias =0 Test
signal level =20mV open drain
40
S
2200
pF
380
pF
49
pF
15.7 21 nC
8.3
nC
3.4
nC
15
nC
1.5
Ω
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Gate charge for synchronous operation: see Appendix A: Power losses estimation
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