STD70N02L_07 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET

STD70N02L - STD70N02L-1
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=10V, I_D=30A,
R_G=4.7Ω, V_GS=10V
(see Figure 18)
Min. Typ. Max Unit
10
ns
130
ns
27
ns
16 21.6 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
Source-drain current
Source-drain current (pulsed)
V_SD ⁽¹⁾ Forward on voltage
I_SD=30A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=60A, di/dt = 100A/µs,
V_DD=20V, Tj=150°C
(see Figure 21)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
50 A
200 A
1.3 V
36
ns
36
nC
2
A
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