STD6N62K3 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3™ Power MOSFET

STD6N62K3 - STF6N62K3 - STP6N62K3 - STU6N62K3
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5.5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 30 V (see Figure 21)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 30 V, T_j = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5.5 A
22 A
1.6 V
190
ns
970
nC
10.5
A
255
ns
1520
nC
12
A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
BV_GSO(1)
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/17