STD6N62K3 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3™ Power MOSFET

STD6N62K3 - STF6N62K3
STP6N62K3 - STU6N62K3
N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO-220,TO-220FP
SuperMESH3™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
max
I_D
Pw
STD6N62K3
STF6N62K3
STP6N62K3
STU6N62K3
620 V
620 V
620 V
620 V
< 1.28 Ω 5.5 A 90 W
< 1.28 Ω 5.5 A⁽¹⁾ 25 W
< 1.28 Ω 5.5 A 90 W
< 1.28 Ω 5.5 A 90 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1. Device summary
Order codes
Marking
STD6N62K3
STF6N62K3
STP6N62K3
STU6N62K3
6N62K3
6N62K3
6N62K3
6N62K3
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
May 2008
Rev 1
1/17
www.st.com
17