STD65N55LF3 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

STD65N55LF3
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD= 27 V, I_D= 32 A,
R_G= 4.7 Ω, V_GS=10 V
(see Figure 15)
Min. Typ. Max. Unit
10
-
25
50
-
10
ns
-
ns
ns
-
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
V_SD
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)⁽¹⁾
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=65 A, V_GS=0
I_SD=65 A,
di/dt =100 A/µs,
V_DD=30 V, Tj=150 °C
(see Figure 17)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.5 V
40
ns
- 60
nC
3
A
Doc ID 16371 Rev 2
5/13