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STD65N55LF3 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STD65N55LF3
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS= 0
55
V
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
10 µA
100 µA
VGS = ± 20 V
±200 nA
VDS = VGS, ID = 250 µA
VGS = 10 V, ID= 32 A
VGS = 5 V, ID= 32 A
1
2.5 V
7.0 8.5 mΩ
8.5 12 mΩ
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 25 V, f=1 MHz,
VGS =0
VDD= 27.5 V, ID = 65 A
VGS = 5 V
(see Figure 16)
Min. Typ. Max. Unit
2200
pF
- 470 - pF
35
pF
20
nC
-
8
- nC
8
nC
4/13
Doc ID 16371 Rev 2
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