STD65N3LLH5 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 30 V, 0.0061, 65 A, DPAK, IPAK STripFET V Power MOSFET

STD65N3LLH5, STU65N3LLH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
V_DD=10 V, I_D= 65 A,
R_G=4.7 Ω, V_GS= 10 V
(Figure 13 and
Figure 18)
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=10 V, I_D= 25 A,
R_G=4.7 Ω, V_GS= 10 V
(Figure 13 and
Figure 18)
Min. Typ. Max. Unit
8.6
ns
-
-
11.2
ns
32.4
ns
-
-
6
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM
Source-drain current
Source-drain current (pulsed)⁽¹⁾
V_SD Forward on voltage
I_SD=32.5 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=32.5 A,
di/dt =100 A/µs,
V_DD=20 V, (Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Min. Typ. Max. Unit
65 A
-
260 A
-
1.1 V
22
ns
-
15
nC
1.4
A
Doc ID 17281 Rev 1
5/17