STD65N3LLH5 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 30 V, 0.0061, 65 A, DPAK, IPAK STripFET V Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD65N3LLH5, STU65N3LLH5
(T_CASE = 25 °C unless otherwise specified).
Table 4. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
I_GSS
V_GS(th)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 30 V
V_DS = 30 V,Tc = 125 °C
V_GS = ± 22 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 32.5 A
SMD version
V_GS= 10 V, I_D= 32.5 A
V_GS= 4.5 V, I_D= 32.5 A
SMD version
V_GS= 4.5 V, I_D= 32.5 A
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
1.8
3
V
0.0061 0.0069 Ω
0.0065 0.0073 Ω
0.0084 0.0093 Ω
0.0088 0.0097 Ω
Table 5. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R_g Intrinsic gate resistance
Test conditions
Min. Typ. Max. Unit
V_DS =25 V, f=1 MHz,
V_GS=0
1290
pF
-
240
- pF
32
pF
V_DD=15 V, I_D = 65 A
V_GS =4.5 V
(Figure 14)
8
nC
-
3.6
- nC
3.4
nC
f=1 MHz Gate DC Bias=0
test signal level = 20 mV
1.7
Ω
open drain
4/17
Doc ID 17281 Rev 1