STD5N60DM2 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

STD5N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 3.5 A
ISD = 3.5 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
3.5 A
-
14 A
-
1.6 V
- 58 70 ns
- 109
nC
-
4
A
trr
Reverse recovery time
ISD = 3.5 A, di/dt = 100 A/µs,
- 109
ns
Qrr
Reverse recovery charge ^{VDD = 60 V, Tj = 150 °C}
(see Figure 16: "Test circuit for
- 309
nC
IRRM
Reverse recovery current ^{inductive load switching and}
diode recovery times")
-
5
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
DocID029525 Rev 1
5/15