STD5N60DM2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

STD5N60DM2
N-channel 600 V, 1.38 Ω typ., 3.5 A MDmesh™ DM2
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS RDS(on) max.
ID
PTOT
STD5N60DM2 600 V 1.55 Ω 3.5 A 45 W
Figure 1: Internal schematic diagram
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Order code
STD5N60DM2
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
5N60DM2
DPAK
Tape and reel
July 2016
DocID029525 Rev 1
This is information on a product in full production.
1/15
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