STD47N10F7AG Datasheet, PDF (5/16 Pages) STMicroelectronics – High avalanche ruggedness

STD47N10F7AG
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 6: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD = 50 V, ID = 22.5 A,
-
15
-
ns
RG = 4.7 Ω, VGS = 10 V
-
17
-
ns
(see Figure 13: "Test circuit for
resistive load switching times"
- 24
-
ns
and Figure 18: "Switching time
waveform")
-
8
-
ns
Symbol
Parameter
Table 7: Source-drain diode
Test conditions
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 45 A
ISD = 45 A, di/dt = 100 A/µs,
VDD = 80 V, TJ = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
Min. Typ. Max. Unit
-
45 A
-
180 A
-
1.1 V
- 53
ns
- 67
nC
- 2.5
A
Notes:
(1)_{Pulse width is limited by safe operating area.}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
DocID027183 Rev 3
5/16