STD47N10F7AG Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STD47N10F7AG
Automotive-grade N-channel 100 V, 12.5 mΩ typ., 45 A,
STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS
STD47N10F7AG 100 V
RDS(on)
max.
18 mΩ
ID
PTOT
45 A 60 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low
on-state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STD47N10F7AG
AM01475v1_noZen
Table 1: Device summary
Marking
Package
47N10F7
DPAK
Packing
Tape and reel
February 2017
DocID027183 Rev 3
This is information on a product in full production.
1/16
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